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RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
FFM201 THRU FFM207
SURFACE MOUNT GLASS PASSIVATED FAST RECOVERY SILICON RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 2.0 Amperes
FEATURES
* * * * * * Glass passivated device Ideal for surface mounted applications Low leakage current Metallurgically bonded construction Mounting position: Any Weight: 0.098 gram
DO-214AA
MECHANICAL DATA
* Epoxy : Device has UL flammability classification 94V-0
0.083 (2.11) 0.077 (1.96) 0.180 (4.57) 0.160 (4.06) 0.155 (3.94) 0.130 (3.30)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%.
o
0.096 (2.44) 0.084 (2.13) 0.060 (1.52) 0.030 (0.76) 0.220 (5.59) 0.205 (5.21)
0.012 (0.305) 0.006 (0.152)
0.008 (0.203) 0.004 (0.102)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At TA = 25 oC unless otherwise noted) RATINGS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current at TA = 55o C Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Maximum Thermal Resistance Typical Junction Capacitance (Note 1) Operating and Storage Temperature Range ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted) CHARACTERISTICS Maximum Forward Voltage at 2.0A DC Maximum Full Load Reverse Current,Full cycle Average at TA = 55oC Maximum DC Reverse Current at @TA = 25 o C Rated DC Blocking Voltage @TA = 125 oC Maximum Reverse Recovery Time (Note 4) SYMBOL VF IR trr 150 FFM201 FFM202 FFM203 FFM204 FFM205 FFM206 FFM207 UNITS 1.3 50 5.0 200 250 500 Volts uAmps uAmps uAmps nSec 2001-5 SYMBOL VRRM VRMS VDC IO IFSM (Note 2) RJL (Note 3) RJA CJ TJ, TSTG FFM201 FFM202 FFM203 FFM204 FFM205 FFM206 FFM207 UNITS 50 35 50 100 70 100 200 140 200 400 280 400 2.0 70 20 60 50 -65 to + 175 600 420 600 800 560 800 1000 700 1000 Volts Volts Volts Amps Amps
0 0
C/ W C/ W pF 0 C
NOTES : 1. Measured at 1.0 MHz and applied average voltage of 4.0VDC 2. Thermal resistance junction to terminal 6.0mm2 copper pads to each terminal. 3. Thermal resistance junction to ambient, 6.0mm2 copper pads to each terminal. 4. Test Conditions: IF = 0.5A, IR = -1.0A, IRR = -0.25A
RATING AND CHARACTERISTIC CURVES ( FFM201 THRU FFM207 )
FIG. 1 - TYPICAL FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT, (A)
PEAK FORWARD SURGE CURRENT, (A)
FIG. 2 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 105 90 75 60 45 30 15 0 1 2 5 10 20 50 NUMBER OF CYCLES AT 60Hz 100
8.3ms Single Half Sine-Wave (JEDEC Method)
2.5 2.0
1.5 1.0
Single Phase Half Wave 60Hz Resistive or Inductive Load
.5
0 0
INSTANTANEOUS FORWARD CURRENT, (A)
25
50
75
100 125 150 175 )
AMBIENT TEMPERATURE, (
FIG. 3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS
JUNCTION CAPACITANCE, (pF)
FIG. 4 - TYPICAL JUNCTION CAPACITANCE 200 100 60 40 20 10 6 4 2 1 .1 .2 .4 1.0 2 4 10 20 REVERSE VOLTAGE, ( V ) 40 100
TJ = 25
20 10 3.0 1.0 0.3 0.1 .03 .01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 INSTANTANEOUS FORWARD VOLTAGE, (V)
TJ = 25 Pulse Width=300uS 1% Duty Cycle
FIG. 5 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50 NONINDUCTIVE 10 NONINDUCTIVE
trr +0.5A
(-)
(+) 25 Vdc (approx) (-)
D.U.T
0
PULSE GENERATOR (NOTE 2)
-0.25A
1 NONINDUCTIVE
OSCILLOSCOPE (NOTE 1)
(+)
-1.0A
NOTES:1 Rise Time = 7ns max. Input Impedance =
1 megohm. 22pF. 2. Rise Time = 10ns max. Source Impedance = 50 ohms.
1cm
SET TIME BASE FOR 50/100 ns/cm
RECTRON

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